| 000 | 00648cam a22002177a 4500 | ||
|---|---|---|---|
| 008 | 130417s2012 gw a b 001 0 eng d | ||
| 020 | _a9783527330324 | ||
| 020 | _a3527330321 | ||
| 040 | _aSDU | ||
| 050 | 0 | 0 |
_aQC585 _bH638 2012 |
| 245 | 0 | 0 |
_aHigh-k gate dielectrics for CMOS technology / _cedited by Gang He and Zhaoqi Sun. |
| 260 |
_aWeinheim : _bWiley-VCH, _c2012. |
||
| 300 |
_a558 p. : _bill. |
||
| 505 | _aHKBU Library | ||
| 650 | 0 |
_aDielectrics. _9193539 |
|
| 650 | 0 |
_aMetal oxide semiconductors, Complementary. _9193540 |
|
| 700 | 1 |
_aHe, Gang _9193541 |
|
| 700 | 1 |
_aSun, Zhaoqi _9193542 |
|
| 900 | _a = C.1 SDU | ||
| 942 |
_cGBE _2lcc |
||
| 999 |
_c104093 _d104093 |
||