| 000 | 00807cam a22002297a 4500 | ||
|---|---|---|---|
| 008 | 080915s2008 si a b 001 0 eng d | ||
| 020 | _a9789812568649 | ||
| 020 | _a9812568646 | ||
| 040 | _aSDU | ||
| 050 | 0 | 0 |
_aTK7871.95 _bM865 2008 |
| 100 | 1 |
_aMiura-Mattausch, Mitiko, _9194605 |
|
| 245 | 1 | 4 |
_aThe physics and modeling of MOSFETS : _bsurface-potential model HiSIM / _cMitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ezaki. |
| 260 |
_aHackensack, NJ : _bWorld Scientific, _c2008. |
||
| 300 |
_a252 p. : _bill. |
||
| 505 | _aHKBU library | ||
| 518 | _aYT2025 M08 | ||
| 650 | 0 |
_aMetal oxide semiconductor field-effect transistors _xMathematical models. _9194607 |
|
| 700 | 1 |
_aMattausch, Hans Jürgen. _9194608 |
|
| 700 | 1 |
_aEzaki, Tatsuya. _9194609 |
|
| 900 | _a= C.1 SDU | ||
| 942 |
_cGBE _2lcc |
||
| 999 |
_c104383 _d104383 |
||